n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - a p r . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 7 5 1 2 n g p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n f e a t u r e s a p p l i c a t i o n s 7 5 v / 7 5 a , r d s ( o n ) = 9 . 1 m w ( t y p . ) @ v g s = 1 0 v a v a l a n c h e r a t e d r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) n - c h a n n e l m o s f e t t o p v i e w o f t o - 2 6 3 p o w e r m a n a g e m e n t f o r i n v e r t e r s y s t e m s note: anpec lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina- tion finish; which are fully compliant with rohs. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j - std-020c for msl classification at lead-free peak reflow temperature. anpec defines ?green? to mean lead-free (rohs compliant) and halogen free (br or cl does not exceed 900ppm by weight in homogeneous material and total of br and cl does not exceed 1500ppm by weight). g s d g d s apm7512n handling code temperature range package code package code g : to-263 operating junction temperature range c : -55 to 175 c handling code tr : tape & reel assembly material l : lead free device g : halogen and lead free device apm7512n g : apm7512n xxxxx xxxxx - date code assembly material
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - a p r . , 2 0 0 8 w w w . a n p e c . c o m . t w 2 a p m 7 5 1 2 n g a b s o l u t e m a x i m u m r a t i n g s symbol parameter rating unit common ratings (t a =25 c unless otherwise noted) v dss drain - source voltage 75 v gss gate - source voltage 25 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current 40 a t c =25 c 300* i d p 300 s pulse drain current tested t c =100 c 200 a t a = 25 c 75 i d continuous drain current t a = 100 c 55 a t a = 25 c 150 p d maximum power dissipation t a = 100 c 75 w r q jc thermal resistance - junction to case 1 c /w r q ja thermal resistance - ju nction to ambient 45 c /w drain - source avalanche ratings e as avalanche energy, single pulsed l=2mh 1 j note: * pulse width limited by safe operating area. e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 7512 n g symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 75 v v ds = 60 v, v gs =0v 1 i dss zero gate voltage drain current t j = 85 c 30 m a v gs(th) gate threshold voltage v ds =v gs , i ds =250 m a 2.5 3.5 4.5 v i gss gate leakage current v gs = 25 v, v ds =0v 100 na r ds(on) a drain - source on - state resistance v gs = 10 v, i ds = 40 a 9.1 12 m w diode characteristics v sd a diode forward voltage i sd = 20 a, v gs =0v 0.8 1.3 v t rr rever se recovery time 70 ns q rr reverse recovery charge i d s = 40 a, dl sd /dt = 100a/ m s 193 nc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - a p r . , 2 0 0 8 w w w . a n p e c . c o m . t w 3 a p m 7 5 1 2 n g e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 7512 n g symbol parameter test condition min. typ. max. unit dynamic characteristics b r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.5 w c iss input capacitance 3740 c oss output capacitance 510 c rss rever se transfer capacitance v gs =0v, v ds =30v, f requency =1.0mhz 195 pf t d(on) turn - on delay time 25 46 t r turn - on rise time 15 28 t d(off) turn - off delay time 65 118 t f turn - off fall time v dd = 35 v, r l = 35 w , i d s =1a, v gen = 10v , r g =6 w 34 62 ns gate charge characteristics b q g total gat e charge 69 97 q gs gate - source charge 17.5 q gd gate - drain charge v ds = 30 v, v gs = 10 v, i d s = 40 a 22 nc notes ?g a : pulse test ; pulse width 3 00 m s, duty cycle 2% . b : guaranteed by design, not subject to production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - a p r . , 2 0 0 8 w w w . a n p e c . c o m . t w 4 a p m 7 5 1 2 n g t y p i c a l c h a r a c t e r i s t i c s p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) normalized effective transient t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) 1e-4 1e-3 0.01 0.1 1 10 40 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 45 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 t c =25 o c 0.01 0.1 1 10 100 300 0.1 1 10 100 500 1ms 1s rds(on) limit t c =25 o c 10ms 100ms dc 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 70 80 t c =25 o c,v g =10v
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - a p r . , 2 0 0 8 w w w . a n p e c . c o m . t w 5 a p m 7 5 1 2 n g v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) d r a i n - s o u r c e o n r e s i s t a n c e v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e normalized threshold voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 180 200 9v 8v 7v 5v 6v v gs = 10v 0 20 40 60 80 100 6 7 8 9 10 11 12 13 v gs =10v -50 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 m a 4 5 6 7 8 9 10 6 8 10 12 14 16 18 20 i ds =40a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - a p r . , 2 0 0 8 w w w . a n p e c . c o m . t w 6 a p m 7 5 1 2 n g v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) v d s - d r a i n - s o u r c e v o l t a g e ( v ) c - capacitance (pf) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate-source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) 0 5 10 15 20 25 30 35 40 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 frequency=1mhz crss coss ciss -50 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 9.1m w v gs = 10v i ds = 40a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.6 1 10 100 200 t j =175 o c t j =25 o c 0 10 20 30 40 50 60 70 0 1 2 3 4 5 6 7 8 9 10 v ds = 30v i ds = 40a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - a p r . , 2 0 0 8 w w w . a n p e c . c o m . t w 7 a p m 7 5 1 2 n g p a c k a g e i n f o r m a t i o n t o - 2 6 3 - 3 b2 e l view a 0 0 . 2 5 gauge plane a 1 seating plane see view a e h d l 1 a c2 b c l 2 e1 d 1 y m b o l min. max. 4.83 0.00 1.14 1.78 0.38 0.74 1.14 1.65 0.25 6.00 a1 b2 c c2 d d1 e millimeters b 0.51 0.99 2.54 bsc to263 9.65 11.43 6.22 0.100 bsc min. max. inches 0.190 0.000 0.020 0.039 0.045 0.070 0.015 0.029 0.045 0.065 0.236 0.380 0.450 0.245 4.06 0.160 0.010 e1 0.380 0.066 0.110 l2 l l1 e 1.78 8.38 9.65 1.68 2.79 0.070 0.330 h 14.61 15.88 0.575 0.625 1.78 0.070 9.00 9.00 0.354 0.354 note : follow jedec to-263 ab. s a 0 8 0 8 q o o o o
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - a p r . , 2 0 0 8 w w w . a n p e c . c o m . t w 8 a p m 7 5 1 2 n g c a r r i e r t a p e & r e e l d i m e n s i o n s application a h t1 c d d w e1 f 381.0 ? 2.00 60 min. 24.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 24.0 ? 0.30 1.75 ? 0.10 11.5 ? 0.10 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 to - 263 4.0 ? 0.10 16.0 ? 0.10 2.0 ? 0.10 1.5+0.10 - 0.00 1.5 min. 0.6+0.00 - 0 .40 10.8 ? 0.20 16.1 ? 0.20 5.2 ? 0.20 h t1 a d a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1 package type unit quantity to - 2 63 tape & reel 1000 d e v i c e s p e r u n i t
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - a p r . , 2 0 0 8 w w w . a n p e c . c o m . t w 9 a p m 7 5 1 2 n g test item method description solderability mil - std - 883d - 2003 245 c, 5 sec holt mil - std - 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b, a102 168 hrs, 100 % rh, 121 c tst mil - std - 883d - 1011.9 - 65 c~150 c, 200 cycles r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) c l a s s i f i c a t i o n r e f l o w p r o f i l e s profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/sec ond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. r e l i a b i l i t y t e s t p r o g r a m t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 t e m p e r a t u r e time critical zone t l to t p
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - a p r . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 0 a p m 7 5 1 2 n g table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb eutectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n t . ) c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838
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